Title :
Metal molecule GaAs devices using redox-active organic self-assembled monolayers
Author :
Jean, Rand K. ; Xi, Bin ; Ren, Tong ; Janes, David B.
Author_Institution :
Purdue Univ., West Lafayette
Abstract :
In the current study, we have developed and characterized metal-molecule-semiconductor devices using redox-active molecules, in which one or more molecular levels lies at an energy level near the contact Fermi level, and compared the performance of these devices to those of device structures with other molecular species. Au-molecule-GaAs heterostructures were fabricated to investigate the modulating effects of various self-assembled monolayers (SAMs) on the GaAs surface.
Keywords :
Fermi level; III-V semiconductors; gallium arsenide; gallium compounds; monolayers; self-assembly; Fermi level; GaAs; metal-molecule-semiconductor devices; organic self-assembled monolayers; redox-active molecules; Chemistry; Cleaning; Contacts; Current density; Educational institutions; Energy states; Gallium arsenide; Gold; Molecular electronics; Nanotechnology;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422502
