Title :
Native defect compensation in III-antimonide bulk substrates
Author :
Pino, Robinson ; Ko, Youngok ; Dutta, Partha S.
Author_Institution :
Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
As-grown, undoped III-antimonide bulk substrates contain high concentration of native defects resulting in high residual carrier density. In this paper, we have demonstrated that native defects can be compensated in bulk substrates of GaSb, InSb, and Ga1-xInxSb via impurity doping and low temperature growth from nonstoichiometric melts and solutions. Decrease in residual carrier concentration up to one order of magnitude at 300 K and three orders of magnitude at 77 K have been achieved.
Keywords :
III-V semiconductors; crystal defects; crystal growth from melt; crystal growth from solution; gallium compounds; indium compounds; semiconductor doping; 300 K; 77 K; GaSb; InSb; as-grown bulk substrates; high residual carrier density; low temperature growth; native defect compensation; nonstoichiometric melts; nonstoichiometric solutions; residual carrier concentration; undoped III-antimonide bulk substrates; via impurity doping; Crystals; Gallium compounds; High speed optical techniques; III-V semiconductor materials; Optical devices; Photonic band gap; Substrates; Systems engineering and theory; Tellurium; Temperature;
Conference_Titel :
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
981-256-196-X
DOI :
10.1109/LECHPD.2004.1549668
