Title :
High-temperature CW mid-infrared interband cascade lasers
Author :
Bewley, W.W. ; Canedy, C.L. ; Kim, C.S. ; Kim, M. ; Lindle, J.R. ; Larrabee, D.C. ; Nolde, J.A. ; Vurgaftman, I. ; Meyer, J.R.
Author_Institution :
Naval Res. Lab., Washington
Abstract :
The ICL performance has improved dramatically in recent years, with maximum cw operating temperatures of 264 and 269 K being reported by the groups at JPL and NRL, respectively. Narrow ridges were quite recently fabricated from the latest ICL wafers, using epitaxial-side-up mounting topped by Au-electroplating to enhance the heat removal. The longer-wavelength ICL operated cw to 229 K, which is considerably higher than for any earlier interband laser emitting at such long. The ridge was generated over 80 mW of cw power at 78 K, where the lasing threshold was only 4.7 A/cm.
Keywords :
electroplating; gold; high-temperature techniques; laser beams; laser materials processing; semiconductor lasers; ICL performance; ICL wafers; epitaxial-side-up mounting; gold-electroplating; heat removal; high-temperature mid-infrared interband cascade lasers; lasing threshold; narrow ridge fabrication; temperature 229 K; temperature 264 K; temperature 269 K; temperature 78 K; Educational institutions; Filling; Gain measurement; Laboratories; Optical losses; Quantum cascade lasers; Radiative recombination; Semiconductor lasers; Temperature; Threshold current;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422550
