Title :
Low-Power, High-Speed Mach-Zehnder Modulator in Silicon
Author :
Specter, S.J. ; Lyszczarz, T.M. ; Geis, M.W. ; Lennon, D.M. ; Yoon, Jinsu ; Grein, Matthew E. ; Schulein, R.T. ; Fuwan Gan ; Kaertner, Franz
Author_Institution :
Lincoln Lab., MIT, Lexington, MA
Abstract :
A high speed diode-based optical modulator has been fabricated in silicon. This device achieves an extremely low VpiL of 0.02 V-cm from 10-100 MHz. Modulation depths of 30% have been achieved at an input power of 100 mW at 5 GHz
Keywords :
frequency response; high-speed optical techniques; optical modulation; optical waveguide components; p-n junctions; semiconductor diodes; silicon; silicon-on-insulator; 10 to 100 MHz; 100 mW; 5 GHz; SOI waveguides; Si-SiO2; diode-based optical modulator; frequency response; high-speed Mach-Zehnder modulator; modulation depth; silicon p-n diodes; CMOS technology; Diodes; Frequency; High speed optical techniques; Optical devices; Optical interferometry; Optical modulation; Optical waveguides; Silicon; Slabs;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708200
