Title :
GaAs based HBT large signal modeling using VBIC for linear power amplifier applications
Author_Institution :
Lab. for DigitalDNA, Motorola Inc., Tempe, AZ, USA
Abstract :
The relevant performance parameters that a large signal device model must predict for linear power amplifier design have been identified. The VBIC model (McAndrew et al., IEEE JSSC vol. 31, no. 10, pp. 1476-83, 1996) was applied to gallium arsenide based heterojunction bipolar transistors and shown to accurately predict all of these performance parameters
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; integrated circuit design; linear network synthesis; power amplifiers; semiconductor device models; GaAs; GaAs based HBT large signal modeling; VBIC; VBIC model; gallium arsenide based heterojunction bipolar transistors; large signal device model; linear power amplifier applications; linear power amplifier design; performance parameters; Circuits; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Power amplifiers; Power generation; Power system modeling; Predictive models; Signal design; Signal processing;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886173
