Title :
Silicon-based Resonant-Cavity-Enhanced Photodetectors
Author :
Buwen Cheng ; Chuanbo Li ; Rongwei Mao ; Fei Yao ; Chunlai Xue ; Jianguo Zhang ; Wenhua Shi ; Yuhua Zuo ; Jinzhong Yu ; Qiming Wang
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
Abstract :
Silicon-based resonant-cavity-enhanced photodetectors (RCE-PD) with Si, Ge islands and InGaAs as absorption materials were introduced, respectively. The Ge islands and Si RCE-PD had a membrane structure and the Si-based InGaAs RCE-PDs were fabricated by bonding technology
Keywords :
III-V semiconductors; cavity resonators; elemental semiconductors; gallium arsenide; germanium; indium compounds; integrated circuit bonding; integrated optoelectronics; island structure; optical fabrication; photodetectors; silicon; Ge islands; InGaAs; Si; absorption materials; bonding technology; membrane structure; silicon-based resonant-cavity-enhanced photodetectors; Absorption; Bandwidth; Biomembranes; Germanium silicon alloys; Mirrors; Photodetectors; Photonics; Reflectivity; Resonance; Silicon germanium;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708206
