Title :
Recent developments in high speed heterojunction devices: a tutorial
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., IL, USA
Abstract :
Some high-speed heterojunction devices and concepts are discussed. The principles of operation of MODFETs are examined, and a few devices using MODFETs are presented. The advantages of heterojunction bipolar transistors (HBTs) are described, and HBT devices are discussed in detail
Keywords :
bipolar integrated circuits; digital integrated circuits; field effect integrated circuits; heterojunction bipolar transistors; high electron mobility transistors; HBTs; HEMTs; MODFETs; developments; heterojunction bipolar transistors; high-speed heterojunction devices; operation; tutorial; Bipolar transistors; Conducting materials; Frequency; Gallium arsenide; Heterojunctions; Lattices; Noise figure; Photonic band gap; Quantum well lasers; Tutorial;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112526
