Title :
Self-aligned contact submicron E/D MODFET IC process: device characteristics and simple circuit applications
Author :
Rohdin, Hans ; Nagy, Avelina ; Fischer-Colbrie, Alice ; Kocot, Chris ; Jaeger, Rolf
Author_Institution :
Hewlett-Packard Lab., Palo Alto, CA, USA
Abstract :
A high-speed, low-power GaAs enhancement/depletion (E/D) IC process for MSI applications (103 devices) is described. The process relies on high-quality molecular-beam-epitaxy (MBE)-grown modulation-doped wafers, and an etch-stop reactive ion etch (RIE) process that preserves the inherent uniformity and control achievable with this growth technique
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated circuit technology; molecular beam epitaxial growth; semiconductor growth; sputter etching; GaAs; MBE; MSI; RIE; circuit applications; device characteristics; enhancement depletion process; etch-stop reactive ion etch; inherent uniformity; modulation-doped wafers; molecular-beam-epitaxy; self-aligned contact; semiconductors; submicron E/D MODFET IC process; Epitaxial layers; Gallium arsenide; HEMTs; High speed integrated circuits; Integrated circuit noise; Laboratories; Lithography; MODFET circuits; MODFET integrated circuits; Molecular beam epitaxial growth;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112527
