Title :
AlInAs/GaInAs HEMTs and HBTs for high speed circuits
Author :
Delaney, Michael J.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
High electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) fabricated in the AlInAs-GaInAs epitaxial material system are described. The unique material and electronic properties of these ternary semiconductors provide extreme high frequency performance. Fundamental device designs for both the HEMT and HBT are presented with performance data. The implementation of these devices in small-scale circuits, ring oscillators, and dividers is demonstrated
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; field effect integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; oscillators; AlInAs-GaInAs epitaxial material system; HBTs; HEMTs; device designs; electronic properties; extreme high frequency performance; frequency dividers; heterojunction bipolar transistors; high speed circuits; performance data; ring oscillators; semiconductors; small-scale circuits; ternary semiconductors; Circuits; Electrons; Frequency; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs; Photonic band gap; Semiconductor materials; Substrates;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112529
