Title :
ESD robustness of a BiCMOS SiGe technology
Author :
Voldman, S. ; Juliano, P. ; Schmidt, N. ; Botula, A. ; Johnson, R. ; Lanzerotti, L. ; Feilchenfeld, N. ; Joseph, A. ; Malinowski, J. ; Eld, E. ; Gross, V. ; Brennan, C. ; Dunn, J. ; Harame, D. ; Herman, D. ; Meyerson, B.
Author_Institution :
Microelectron. Div., IBM Commun. Res. & Dev. Center, Essex Junction, VT, USA
Abstract :
High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. BiCMOS active and passive elements are discussed
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; capacitors; electron device testing; electrostatic discharge; heterojunction bipolar transistors; inductors; integrated circuit reliability; integrated circuit testing; resistors; semiconductor device reliability; semiconductor device testing; semiconductor epitaxial layers; semiconductor materials; BiCMOS SiGe technology; BiCMOS active elements; BiCMOS passive elements; ESD robustness; SiGe; electrostatic discharge robustness; epitaxial-base pseudomorphic SiGe heterojunction npn bipolar transistors; epitaxial-base pseudomorphic silicon germanium npn HBTs; high current characterization; pseudomorphic silicon germanium heterojunction npn bipolar transistors; BiCMOS integrated circuits; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Robustness; Silicon germanium; Space vector pulse width modulation; Substrates; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886208
