Title :
Effects of volume and frequency scaling in AlN contour mode NEMS resonators on oscillator phase noise
Author :
Rinaldi, Matteo ; Piazza, Gianluca
Author_Institution :
Dept. of Electr. & Syst. Eng., Univ. of Pennsylvania, Philadelphia, PA, USA
Abstract :
This paper presents, for the first time, the analytical modeling and the experimental verification of the effects of volume and frequency scaling in AlN contour mode NEMS resonators (CMRs) on oscillator phase noise and associated limit of detection (LOD) when the device is used for sensing mass-induced frequency shifts. Both the analytical model and the experiments show that the LOD is improved by scaling the thickness of the AlN plate and by increasing the operating frequency of the device (i.e. implementing a high frequency resonant nano-plate). LOD values in the order of 10s of zg/μm2 are experimentally extracted.
Keywords :
III-V semiconductors; aluminium compounds; micromechanical resonators; nanoelectromechanical devices; oscillators; phase noise; wide band gap semiconductors; AlN; CMR; LOD; contour mode NEMS resonators; frequency scaling; limit of detection; oscillator phase noise; volume scaling; Analytical models; CMOS integrated circuits; Frequency measurement; Nanoscale devices; Noise; Oscillators; Resonant frequency;
Conference_Titel :
Frequency Control and the European Frequency and Time Forum (FCS), 2011 Joint Conference of the IEEE International
Conference_Location :
San Fransisco, CA
Print_ISBN :
978-1-61284-111-3
DOI :
10.1109/FCS.2011.5977816