Title :
A 0.8–13.4GHz combined voltage-controlled oscillator with an exclusive-OR in 130nm SiGe BiCMOS
Author :
Lin, Yang ; Kotecki, David E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maine, Orono, ME, USA
Abstract :
Wide-tuning-range voltage-controlled oscillator (VCO) design is motivated by applications in broadband communications, radars, phase-locked loops and clock generation/distribution. In this paper, post-layout simulation results of a ring quadrature VCO (QVCO) combined with an exclusive-OR (XOR) to double the frequency in 130nm SiGe BiCMOS technology are presented. The combined VCO can be tuned from 0.8 to 13.4GHz. At 0.8GHz, the VCO consumes 13.98mW of power and generates -45 dBm (32nW) of output power into 50 Ohm loads. At 13.4GHz, it consumes 15.52mW of power and generates -30 dBm (1μW) of output power. In the tuning range, the XOR consumes ~11mW of power. The VCO phase noise at 10MHz offset frequency is -100.1dBc/Hz and -91.5dBc/Hz at 0.8GHz and 13.4GHz, respectively. The VCO figure of merit (FOM) is in the range of -127 to -142. The microchip area is 450×450μm2.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; MMIC oscillators; UHF oscillators; integrated circuit layout; integrated circuit noise; logic gates; phase noise; voltage-controlled oscillators; BiCMOS technology; FOM; QVCO; SiGe; XOR; exclusive-OR; figure of merit; frequency 0.8 GHz to 13.4 GHz; phase noise; post-layout simulation; ring quadrature VCO; size 130 nm; wide-tuning-range voltage-controlled oscillator; CMOS integrated circuits; Clocks; Gallium arsenide; Load modeling; Semiconductor device modeling; Zinc; 130nm SiGe BiCMOS; combination of a quadrature VCO with an XOR; exclusive-OR (XOR); voltage-controlled oscillator (VCO); wide tuning range;
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-8155-2
DOI :
10.1109/ICECS.2010.5724540