DocumentCode :
2668881
Title :
Speeding up simulation time in EEPROM memory designs
Author :
Aziza, H. ; Delsuc, B. ; Portal, J.M. ; Nee, D.
Author_Institution :
UMR CNRS, IMT-Technopole de Chateau Gombert, Marseille
fYear :
2006
fDate :
5-7 Sept. 2006
Firstpage :
285
Lastpage :
288
Abstract :
This paper presents an efficient technique to decrease simulation lime of EEPROM memory arrays. This technique is based on the complexity reduction of an existing compact EEPROM model. This original model is unsuitable when dealing with large memory arrays simulations. To overcome this limitation, the authors propose two alternative models which allow reducing time and memory space overheads when compared to the compact model. The first EEPROM model (level 1). is as simple as possible and provides fast simulation time. The second model (level 2) is a compromise between the compact model and the level 1 model. We also present simulation time results using these different models within memory arrays
Keywords :
EPROM; integrated circuit design; EEPROM memory design; complexity reduction; memory space overheads; Circuit simulation; Circuit synthesis; Decoding; EPROM; Integrated circuit interconnections; Latches; Logic arrays; Random access memory; Read-write memory; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on
Conference_Location :
Tunis
Print_ISBN :
0-7803-9726-6
Type :
conf
DOI :
10.1109/DTIS.2006.1708695
Filename :
1708695
Link To Document :
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