A dual-mode dual-standard LNA for DCS1800/W-CDMA applications

Author

Moreira, C.P. ; Kerherve, E. ; Jarry, P. ; Belot, D.

Author_Institution

IXL Lab., Bordeaux Univ., Talence

fYear

2006

fDate

5-7 Sept. 2006

Firstpage

21

Lastpage

26

Abstract

The authors present in this article a dual-standard dual-mode low-noise amplifier (LNA) for DCS1800/W-CDMA-FDD applications. In order to save die area compared to conventional parallel LNAs, an alternative circuit configuration have been used. It consists of sharing the most die consuming elements (inductances) in both operation standards, enabling a more compact solution. The mode and standard selection is performed through a bias scheme (MOS switches) that allows alternating between the two involved standards. The LNA die area is 1.0 times 1.2 mm² and it consumes 6.8mW (3.8mA under 1.8V), including bias circuitry

Keywords

BiCMOS integrated circuits; code division multiple access; low noise amplifiers; network synthesis; 1.8 V; 3.8 mA; 6.8 mW; DCS1800/W-CDMA applications; MOS switches; alternative circuit configuration; bias scheme; compact solution; dual-mode LNA; dual-standard LNA; low-noise amplifier; multistandard LNA; noise optimization; wireless applications; Circuits; Design optimization; Impedance matching; Low-noise amplifiers; Multiaccess communication; Noise figure; Optimization methods; Packaging; Switches; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on

Conference_Location

Tunis

Print_ISBN

0-7803-9726-6

Type

conf

DOI

10.1109/DTIS.2006.1708730

Filename

1708730