Title :
Transition from a quantum-dot to a quantum-wire electronic structure in InGaAs/GaAs quantum-dot chains
Author :
Wang, X.Y. ; Mazur, Yu.I. ; Ma, W.Q. ; Wang, Z.M. ; Salamo, G.J. ; Xiao, M. ; Mishima, T.D. ; Johnson, M.
Author_Institution :
Dept. of Phys., Arkansas Univ., Fayetteville, AR, USA
Abstract :
We report on the carrier transport behaviors observed in a vertically and laterally organized quantum-dot array. Photoluminescence polarization studies show a dual dot/wire electronic structure and a transition between them as the temperature is increased.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; semiconductor quantum wires; InGaAs-GaAs; carrier transport behaviors; dot/wire electronic structure and; photoluminescence polarization; quantum-dot; quantum-dot array; quantum-dot chains electronic structure; quantum-wire electronic structure; Energy states; Gallium arsenide; Indium gallium arsenide; Optical polarization; Photoluminescence; Quantum dot lasers; Quantum dots; Shape control; Temperature; Wire;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238520
