DocumentCode :
2670110
Title :
Lifetime analysis of photoconductive THz emitters
Author :
Gobel, T. ; Schoenherr, D. ; Sydlo, C. ; Feiginov, M. ; Meissner, P. ; Hartnagel, H.L.
Author_Institution :
Fraunhofer Inst. for Telecommun., Heinrich Hertz Inst., Berlin, Germany
fYear :
2011
fDate :
2-7 Oct. 2011
Firstpage :
1
Lastpage :
3
Abstract :
The durability of photoconductive Terahertz emitters significantly depends on bias voltage and/or optical power. We analyze the optimum operation conditions of photomixers for long-term performance and link the accessible signal-to-noise ratio to the photomixer lifetime via an Arrhenius analysis.
Keywords :
durability; microwave photonics; photoconducting devices; terahertz wave devices; Arrhenius analysis; bias voltage; lifetime analysis; optical power; photoconductive THz emitters; photoconductive terahertz emitters; photomixer lifetime; signal-to-noise ratio; Gallium arsenide; Heating; Optical amplifiers; Signal to noise ratio; Stimulated emission; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
ISSN :
2162-2027
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/irmmw-THz.2011.6104776
Filename :
6104776
Link To Document :
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