DocumentCode
2671602
Title
A new detection method of soft breakdown in ultra-thin gate oxides by light-emission analysis
Author
Ohgata, K. ; Ogasawara, M. ; Kawakami, M. ; Koyama, T. ; Murakami, E.
Author_Institution
Process & Device Anal. Eng. Dev. Dept., Renesas Technol. Corp., Hitachinaka, China
fYear
2009
fDate
26-30 April 2009
Firstpage
700
Lastpage
703
Abstract
We clarified that the SBD in ultra-thin oxides with the large direct tunneling current in which masks the SBD event can be detected by using the adequate threshold of the intensity in light-emission analysis. This new method is a WLR tool for monitoring oxides integrity instead of V-RAMP test.
Keywords
field effect transistors; semiconductor device breakdown; semiconductor device reliability; SBD; light-emission analysis; soft breakdown; tunneling current; ultra-thin gate oxide; Electric breakdown; Event detection; Failure analysis; Indium gallium arsenide; Leakage current; Lenses; Microscopy; Random access memory; Testing; Tunneling; V-RAMP; ligth-emission; oxide; soft breakdown;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173333
Filename
5173333
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