• DocumentCode
    2672376
  • Title

    Chip Level IMPATT Combining at 40 GHz

  • Author

    Rucker, C.T. ; Amoss, J.W. ; Hill, G.N.

  • fYear
    1981
  • fDate
    15-19 June 1981
  • Firstpage
    347
  • Lastpage
    348
  • Abstract
    Results with series and series-parallel connections of CW40 GHz GaAs IMPATT diodes are discussed. The multichip geometries utilize Raytheon CW double-drift device chips and are essentially scaled versions of successful X-band geometries reported previously. Maximum series combining efficiency of 82 percent has been achieved.
  • Keywords
    Capacitors; Circuits; Degradation; Diodes; Fixtures; Frequency; Gallium arsenide; Geometry; Impedance; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1981 IEEE MTT-S International
  • Conference_Location
    Los Angeles, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1981.1129920
  • Filename
    1129920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2672376