DocumentCode :
2672490
Title :
Comparison of device degradation of n-type metal-induced laterally crystallized poly-Si TFTs with or without hydrogenation
Author :
Wang, Mingxiang ; Hu, Chunfeng ; Zhou, Yan ; Xu, Meijuan
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
fYear :
2009
fDate :
26-30 April 2009
Firstpage :
960
Lastpage :
963
Abstract :
Hydrogenation effect on reliability of n-type metal-induced laterally crystallized poly-Si TFTs is systematically evaluated by comparing device transfer and output characteristic degradation under both hot carrier (HC) and self-heating (SH) stresses. Under HC stress, hydrogenated device exhibits better stability in transfer characteristics, but worse stability in output characteristics. Under SH stress, hydrogenation leads to instability in both transfer and output characteristics. Under both stresses, very different degradation behaviors associated with hydrogenation are found, reflecting different degradation mechanism involved for hydrogenated devices.
Keywords :
elemental semiconductors; hot carriers; hydrogenation; semiconductor device reliability; semiconductor thin films; silicon; thin film transistors; Si; degradation behaviors; hot carrier; hydrogenation; low temperature polysilicon thin film transistors; metal-induced lateral crystallization; n-type poly-Si TFTs; output characteristics; reliability; self-heating; transfer characteristics; Crystallization; Degradation; Hot carriers; Microelectronics; Plasma devices; Plasma temperature; Stability; Stress; Testing; Thin film transistors; hot carrier; hydrogenation; poly-Si TFTs; self-heating;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
ISSN :
1541-7026
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2009.5173389
Filename :
5173389
Link To Document :
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