Effect of mechanical strain on the NBTI of short-channel p-MOSFETS: Role of impactionization

Author

Teo, Q. ; Ang, D.S. ; See, K.S. ; Yang, P.Z.

Author_Institution

Sch. of Electr. Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2009

fDate

26-30 April 2009

Firstpage

1019

Lastpage

1022

Abstract

The effect of mechanical strain (MS) and channel length reduction (CLR) on the NBTI of the ultra-thin SiO₂ (28 Aring) gate p-MOSFET is investigated. Results show that for effective gate stress voltage |V_g - V_th| below the threshold of impact ionization (II), MS and CLR have negligible impact on NBTI. On the other hand, for |V_g - V_th| approaching and exceeding the II threshold, stress induced degradation (threshold voltage shift |DeltaV_th|) exhibits increased sensitivity on MS and CLR, i.e. compressive-strained and short-channel devices exhibit a significant increase in |DeltaV_th|. This new observation is able to resolve conflicting reports regarding the effect of MS and CLR on NBTI.

Keywords

MOSFET; radiation hardening (electronics); silicon compounds; thermal stability; NBTI; SiO₂; channel length reduction; gate stress voltage; impact ionization; mechanical strain; short-channel p-MOSFET; stress-induced degradation; Capacitive sensors; Compressive stress; Impact ionization; MOSFET circuits; Niobium compounds; Silicon compounds; Tensile strain; Threshold voltage; Titanium compounds; Transconductance; Channel Length Reduction (CLR); Compressive; Impact ionization (II); Mechanical Strained (MS); Negative Bias Temperature Instability (NBTI); Tensile;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173403

Filename

5173403