• DocumentCode
    2672731
  • Title

    Extraordinary carrier multiplication in GaAs MQWs induced by intense terahertz pulse

  • Author

    Hirori, H. ; Shinokita, K. ; Shirai, M. ; Tani, S. ; Kadoya, Y. ; Tanaka, K.

  • Author_Institution
    Inst. for Integrated Cell-Mater. Sci., Kyoto Univ., Kyoto, Japan
  • fYear
    2011
  • fDate
    2-7 Oct. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on the extraordinary carrier multiplication phenomena of GaAs quantum wells under only intense terahertz (THz) pulse irradiation. The intensity of exciton luminescence is enhanced more than about 103 times with an increase of the electric field amplitude of the THz pulse from 0.5 to 1 MV/cm with a threshold-like behavior.
  • Keywords
    III-V semiconductors; excitons; gallium arsenide; semiconductor quantum wells; GaAs; carrier multiplication phenomena; electric field amplitude; exciton luminescence intensity; gallium arsenide MQW; intense THz pulse irradiation; intense terahertz pulse irradiation; quantum wells; Electric fields; Excitons; Gallium arsenide; Luminescence; Optical pulses; Radiation effects; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
  • Conference_Location
    Houston, TX
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4577-0510-6
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/irmmw-THz.2011.6104913
  • Filename
    6104913
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2672731