Title :
DC and RF lifetests on a GaAs MMIC chip set
Author :
Paine, Bruce ; Delaney, Michael
Author_Institution :
Hughes Space & Commun. Co., Los Angeles, CA, USA
Abstract :
We have conducted a program of lifetesting on a series of MESFET MMICs. The circuits were small-signal MMICs, designed by Hughes. They were fabricated by a single commercial foundry: Raytheon TI Systems Inc. The technology involves ion-implanted GaAs, with e-beam gates of 0.50 and 0.25 μm length. The 0.25 μm devices also have an implanted p-type layer for better noise figure
Keywords :
III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; integrated circuit testing; life testing; 0.25 micron; 0.50 micron; DC lifetest; GaAs; GaAs MMIC chip set; RF lifetest; e-beam gate; ion-implanted GaAs; noise figure; small-signal MESFET circuit; Circuits; FETs; Gallium arsenide; Life testing; MMICs; Power measurement; Radio frequency; Radiofrequency amplifiers; Space technology; Temperature;
Conference_Titel :
GaAs Reliability Workshop, 1997., Proceedings
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7908-0064-0
DOI :
10.1109/GAASRW.1997.656119
