DocumentCode :
2672939
Title :
Cooled Low Noise GaAs Monolithic Mixers at 110 GHz
Author :
Clifton, B.J. ; Alley, G.D. ; Murphy, R.A. ; Piacentini, W.J. ; Mroczkowski, I.H. ; Macropoulos, W.
fYear :
1981
fDate :
15-19 June 1981
Firstpage :
444
Lastpage :
446
Abstract :
We describe the fabrication and testing of GaAs monolithic integrated circuit mixers which have liquid nitrogen double sideband (DSB) mixer noise temperatures in the range 50-200 K and conversion losses of 4.0-5.0 dB.
Keywords :
Ceramics; Coupling circuits; Gallium arsenide; Metallization; Monolithic integrated circuits; Ohmic contacts; Optical surface waves; Schottky barriers; Schottky diodes; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1981.1129955
Filename :
1129955
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2672939
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