Title :
Optically induced biexciton energy shift in semiconductor quantum wells
Author :
Rumyantsev, I. ; Kwong, N.H. ; Takayama, R. ; Binder, R. ; Phillips, M. ; Wang, H.
Author_Institution :
Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA
Abstract :
The energy level shift of a coherent biexciton (bound two-exciton state) in a semiconductor has been observed experimentally and analyzed theoretically. The shift, which results from the presence of excitons, can be related to the AC Stark shifts of the underlying exciton states.
Keywords :
Stark effect; biexcitons; high-speed optical techniques; nonlinear optical susceptibility; semiconductor quantum wells; spectral line shift; AC Stark shifts; biexciton; bound two-exciton state; energy level shift; excitons; optical induced shift; pump-probe experiment; semiconductor quantum wells; Energy states; Excitons; Frequency; Nonlinear optics; Optical pumping; Optical sensors; Probes; Quantum mechanics; Resonance; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238398
