Title :
A 1 μm CMOS/SOI 64 K SRAM with 10 nA standby current
Author :
Houston, T.W. ; Lu, H. ; Mei, P. ; Blake, T.G.W. ; Hite, L.R. ; Sundaresan, R. ; Matloubiam, M. ; Bailey, W.E. ; Liu, J. ; Peterson, A. ; Pollack, G.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Summary form only given. The successful design and fabrication of a 64 K SRAM on SIMOX material is discussed. The advantage of the small junction area resulting from mesa isolation is most evident in the very low standby current. An impressively high yield for first-pass material in a research wafer fabrication area was obtained. Aspects of the design relating to the SOI characteristics are discussed and full characterization results are presented
Keywords :
CMOS integrated circuits; VLSI; integrated circuit technology; integrated memory circuits; random-access storage; semiconductor technology; semiconductor-insulator boundaries; 1 micron; 10 nA; 64 K SRAM; 64 kbit; CMOS/SOI; SIMOX material; SOI characteristics; Si-SiO2; characterization results; first-pass material; high yield; low standby current; mesa isolation; research wafer fabrication area; small junction area; CMOS technology; Capacitance; DNA; Fabrication; Power dissipation; Probes; Production; Random access memory; Silicides; Voltage;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69803
