DocumentCode
267396
Title
A wavelet based method for modeling and simulation of a SiC BJT
Author
Xiuting Lv ; Pingan Tan
Author_Institution
Sch. of Inf. Eng., Xiangtan Univ., Xiangtan, China
fYear
2014
fDate
5-8 Nov. 2014
Firstpage
1148
Lastpage
1153
Abstract
This paper focuses on the modeling and simulation of silicon carbide(SiC) bipolar junction transistor(BJT). SiC BJT is modeled in MATLAB using internal dynamical equation, and the Haar wavelet method is used to solve the ambipolar diffusion equation (ADE). The simulation results of switching waveforms of SiC BJT are given, which verify the validity of this method.
Keywords
Haar transforms; bipolar transistors; diffusion; mathematics computing; semiconductor device models; silicon compounds; wavelet transforms; wide band gap semiconductors; Haar wavelet method; MATLAB; SiC; SiC BJT; ambipolar diffusion equation; bipolar junction transistor; internal dynamical equation; switching waveforms; wavelet based method; Educational institutions; Equations; Junctions; Mathematical model; Silicon carbide; Simulation; Wavelet transforms; Haar wavelet; SiC BJT; modeling; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Application Conference and Exposition (PEAC), 2014 International
Conference_Location
Shanghai
Type
conf
DOI
10.1109/PEAC.2014.7038022
Filename
7038022
Link To Document