Title :
Charge carrier dynamics of ZnSe by optical-pump terahertz-probe spectroscopy
Author :
Tapia, A.K.G. ; Yamamoto, N. ; Ponseca, C., Jr. ; Tominaga, K.
Author_Institution :
Grad. Sch. of Sci., Kobe Univ., Kobe, Japan
Abstract :
The optical properties and transient dynamics of ZnSe were studied by terahertz time-domain spectroscopy (THz-TDS) and optical-pump terahertz probe (OPTP) spectroscopy, respectively. From the THz time-domain signal, the frequency-dependent absorption coefficient and index of refraction of ZnSe were calculated. It follows that the values appear to be similar with those in literatures. The complex permittivity and conductivity of ZnSe were then derived. It was found out that ZnSe exhibit a more dominant dielectric response by the Jonscher´s model. It was also noted that the Drude model did not fit the conductivity data. A UV-pump pulse was introduced to observe the transient dynamics. ZnSe has a faster charge carrier relaxation compared with Si and Ge.
Keywords :
II-VI semiconductors; carrier relaxation time; optical pumping; permittivity; refractive index; terahertz spectroscopy; ultraviolet spectra; wide band gap semiconductors; zinc compounds; Drude model; Jonscher model; THz time-domain signal; UV-pump pulse; ZnSe; charge carrier dynamics; charge carrier relaxation; complex conductivity; complex permittivity; dielectric response; frequency-dependent absorption coefficient; optical properties; optical-pump terahertz probe spectroscopy; refraction index; terahertz time-domain spectroscopy; transient dynamics; Materials; Optical pulses; Optical refraction; Optical variables measurement; Permittivity; Spectroscopy; Transient analysis;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105008