Title :
Non Linear Equivalent Circuit For Broadband GaAs MESFET Power Amplifier Design
Author :
Soares, Rafael ; Goudelis, M. ; Loriou, B. ; de Los, E. ; Devo, R.
Abstract :
A non-linear equivalent circuit is developed to model the fundamental frequency r.f. performance of a 1µm x 800 µm GaAs MESFET, based on two-port large-signal amplifier measurements between 6-8 GHz. Potentially larqe-band, the circuit accurately predicts in-band AM/PM conversion and saturation of the device with arbitrary terminal loads.
Keywords :
Broadband amplifiers; Distortion measurement; Equivalent circuits; Frequency measurement; Gallium arsenide; MESFET circuits; Power amplifiers; Power measurement; Scattering parameters; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130610
