Investigation of recombination of nonequilibrium charge carriers in InAs

Author

Kesler, Valeriy G. ; Gorbunov, Andrei V.

Author_Institution

Inst. of Semicond. Phys. SB RAS, Novosibirsk, Russia

fYear

2009

fDate

1-6 July 2009

Firstpage

17

Lastpage

19

Abstract

This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers recombination process under pulse laser exposure of semiconductor film surface and comparison of simulated and experimental curves of photoconductivity relaxation. The experimental photoconductivity relaxation curves were obtained by microwave (SHF) method.

Keywords

III-V semiconductors; carrier lifetime; indium compounds; laser beam effects; photoconductivity; semiconductor epitaxial layers; surface recombination; InAs; carrier life time; epitaxial layers; microwave method; nonequilibrium charge carrier recombination; photoconductivity relaxation parameters; pulse laser exposure; semiconductor film surface; surface recombination rate; Charge carriers; Epitaxial layers; Indium; Laser modes; Masers; Optical pulses; Photoconductivity; Radiative recombination; Semiconductor lasers; Semiconductor process modeling; InAs; microwave; surface recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-4571-4

Type

conf

DOI

10.1109/EDM.2009.5173915

Filename

5173915