DocumentCode :
2675857
Title :
W-band monolithic CPW Wilkinson CMOS power amplifier
Author :
Chan, Doris A. ; Feng, Milton
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear :
2011
fDate :
16-19 Jan. 2011
Firstpage :
33
Lastpage :
36
Abstract :
A 77-83 GHz power amplifier (PA) is developed using the CPW Wilkinson power-combining technique in a 90 nm CMOS process. From the single tone power measurement, a linear power gain of 20 dB, saturated power of 12.3 dBm, and maximum PAE of 3.9% are achieved for the Wilkinson MMW PA at 80 GHz.
Keywords :
CMOS analogue integrated circuits; coplanar waveguides; field effect MIMIC; millimetre wave power amplifiers; power combiners; power measurement; W-band monolithic CPW Wilkinson CMOS power amplifier; efficiency 3.9 percent; frequency 77 GHz to 83 GHz; frequency 80 GHz; gain 20 dB; power-combining technique; single tone power measurement; size 90 nm; CMOS integrated circuits; Coplanar waveguides; Current measurement; Gain; Power amplifiers; Power measurement; Transmission line measurements; CMOS; coplanar waveguide; millimeter-wave; power amplifier; power divider/combiner;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2011 IEEE Topical Conference on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8416-4
Electronic_ISBN :
978-1-4244-8415-7
Type :
conf
DOI :
10.1109/PAWR.2011.5725385
Filename :
5725385
Link To Document :
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