DocumentCode
2676019
Title
Widely Tunable Millimeter-wave Mixers Using Beam-lead Diodes
Author
Nussbaurn, S. ; Calviello, J.A. ; Sard, E. ; Arnoldo, N.
fYear
1982
fDate
15-17 June 1982
Firstpage
209
Lastpage
211
Abstract
Newly developed GaAs beam-lead diodes have been used in mixers covering the millimeter bands of 35 to 50 GHz, 70 to 90, and 90 to 120 GHz. The mixers were tested at room temperature and achieved the following single sideband conversion losses: 4 to 4.5 dB from 35 to 50 GHz, 5 to 7 dB from 70 to 90 GHz, 4.5 to 6.5 dB from 90 to 120 GHz. SSB mixer noise temperature from 90 to 120 GHz ranged from 494 K to 1200 K. Room and cryogenic noise temperature measurements for the other mixers are in progress.
Keywords
Amplitude modulation; Cryogenics; Cutoff frequency; Diodes; Filters; Mixers; Parasitic capacitance; Radio frequency; Temperature; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130664
Filename
1130664
Link To Document