Title :
Gauss-Quadrature rule in narrow band MIS structures modeling
Author :
Nastovjak, Artem E. ; Polovinkin, Vladimir G.
Author_Institution :
Rzhanov Inst. of Semicond. Phys. Siberian Branch of Russian Acad. of Sci., Novosibirsk, Russia
Abstract :
In the paper Gauss-Quadrature formulas for band carrier concentration and band carrier concentration integral are presented. These integrals can be used for semiconductors electro-physical parameter calculation. Obtained formulas require less machine time in comparison with Simpson method for semiconductor characteristic calculation in the non-parabolic band case.
Keywords :
Poisson equation; carrier density; Gauss-quadrature rule; band carrier concentration integral; narrow band MIS structures modeling; non-parabolic band case; Calculus; Charge carrier processes; Data processing; Gaussian processes; Integral equations; Metal-insulator structures; Narrowband; Numerical models; Physics; Poisson equations; Gauss-Quadrature rule; Poisson equation; carrier concentration; non-parabolic bands;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173995
