• DocumentCode
    26771
  • Title

    Quantum Confinement and Volume Inversion in {\\rm MOS}^{3} Model for Short-Channel Tri-Gate MOSFETs

  • Author

    Kloes, Alexander ; Schwarz, Mathias ; Holtij, Thomas ; Navas, Alvaro

  • Author_Institution
    Compentence Center Nanoelectron. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany
  • Volume
    60
  • Issue
    8
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    2691
  • Lastpage
    2694
  • Abstract
    An efficient way to include the effects of quantum confinement and volume inversion in the MOS3 compact model for lightly doped triple-gate silicon-on-insulator MOSFETs is presented. The model is verified with numerical results based on the nonequilibrium Green´s function formalism. The numerically efficient modeling approach shows a good agreement down to a channel length of 10 nm and silicon fin thickness of 3 nm.
  • Keywords
    Green´s function methods; MOSFET; numerical analysis; semiconductor device models; silicon-on-insulator; MOS3 compact model; Si; lightly doped triple-gate silicon-on-insulator MOSFET; nonequilibrium Green´s function formalism; quantum confinement; short-channel trigate MOSFET; size 10 nm; size 3 nm; volume inversion; Electric potential; Equations; Logic gates; MOSFET; Mathematical model; Numerical models; Semiconductor device modeling; Compact model; FinFET; MOSFET; quantum; short-channel; triple gate; volume inversion;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2271093
  • Filename
    6553605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=26771