DocumentCode :
2678313
Title :
Au/Al-metal bonding conditions for double metal waveguide on GaN based terahertz quantum cascade laser structure
Author :
Matsumoto, S. ; Terashima, W. ; Yasuda, T. ; Hirayama, H.
Author_Institution :
Dept. of Mater. Eng., Ishinomaki Senshu Univ., Miyagi, Japan
fYear :
2011
fDate :
2-7 Oct. 2011
Firstpage :
1
Lastpage :
2
Abstract :
We investigated metal bonging conditions of Au/Al layers formed on a GaN/Sapphire and on a GaAs substrates for a double metal waveguide of a GaN based terahertz quantum cascade laser. We found that the best bonding condition of Au/Al layers was under a pressure of 100 kg/cm2 at 200°C.
Keywords :
aluminium; bonding processes; gallium compounds; gold; quantum cascade lasers; sapphire; submillimetre wave lasers; wide band gap semiconductors; Au-Al; GaAs; GaN-Al2O3; double metal waveguide; metal bonding; temperature 200 degC; terahertz quantum cascade laser; Bonding; Gallium arsenide; Gallium nitride; Gold; Quantum cascade lasers; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
ISSN :
2162-2027
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/irmmw-THz.2011.6105228
Filename :
6105228
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2678313
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