Title :
Fast epitaxial growth of thick quasi-phase matched GaP for applications in the MIR and THz: Determination of the optimal substrate and pattern orientation
Author :
Tassev, V. ; Snure, M. ; Peterson, R. ; Bliss, D. ; Bryant, G. ; Goodhue, W. ; Vangala, S. ; Termkoa, K. ; Lin, A. ; Harris, J.S. ; Fejer, M.M. ; Yapp, C.
Author_Institution :
Sensors Directorate, Air Force Res. Lab., Wright-Patterson AFB, OH, USA
Abstract :
Halide vapor phase epitaxial growth of GaP was performed on GaP half- and orientation - patterned templates. This allowed optimization of substrate material, patterning approach and pattern orientation, which resulted in growth of +350 μm thick quasi-phase matched GaP with successful replication of the initial patterns.
Keywords :
III-V semiconductors; gallium compounds; infrared spectra; optimisation; semiconductor epitaxial layers; semiconductor growth; terahertz wave spectra; vapour phase epitaxial growth; GaP; MIR applications; THz applications; halide vapor phase epitaxial growth; infrared spectra; optimal substrate; optimization; pattern orientation; terahertz spectra; thick quasiphase matched materials; Absorption; Epitaxial growth; Frequency conversion; Gallium arsenide; Nonlinear optics; Substrates;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105245
