Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects

Author

Rudenko, Tamara ; Yu, Rong ; Barraud, S. ; Cherkaoui, Karim ; Nazarov, Anatoly

Author_Institution

Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine

Volume

34

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

957

Lastpage

959

Abstract

In this letter, we propose a new method to extract the doping concentration and flat-band voltage in junctionless (JL) multigate nanowire (NW) mosfets. The method is based on using the gate-to-channel capacitance measurements of devices with different relatively small NW widths, for which 2-D electrostatic effects are appreciable, and plotting the average carrier concentration as a function of the gate voltage. The proposed method is verified using numerical simulations and experimental data for trigate JL transistors.

Keywords

MOSFET; capacitance measurement; doping profiles; heavily doped semiconductors; nanowires; numerical analysis; semiconductor device measurement; semiconductor doping; 2D electrostatic effects; MOSFET; doping concentration; flat-band voltage; gate-to-channel capacitance measurements; nanowire; numerical simulations; trigate junction less transistors; Doping; Electrostatics; Logic gates; MOSFET; Numerical simulation; Doping concentration; flat-band voltage; junctionless (JL) multigate mosfets; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2268575

Filename

6553607