DocumentCode :
2680307
Title :
Focused ion beam sample preparation, transmission electron microscopy and electron energy loss spectroscopy analysis of advanced CMOS silicon technology interconnections
Author :
Pantel, R. ; Auvert, G. ; Mascarin, G.
Author_Institution :
France Telecom - CNET
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
99
Lastpage :
101
Keywords :
CMOS technology; Electron beams; Energy loss; Etching; Integrated circuit interconnections; Ion beams; Metallization; Plasma applications; Transmission electron microscopy; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887525
Filename :
887525
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680307
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