Title :
Ultra-stable nonlinear thin-film piezoelectric-on-substrate oscillators operating at bifurcation
Author :
Fatemi, H. ; Shahmohammadi, M. ; Abdolvand, Reza
Author_Institution :
Oklahoma State Univ., Tulsa, OK, USA
Abstract :
Presented is a ~27MHz oscillator incorporating a two-port thin-film piezoelectric-on-silicon resonator with a phase noise (PN) of -139 dBc/Hz at 1kHz and -157 dBc/Hz at 1MHz from the carrier. The close-to-carrier PN is equivalent to -148 dBc/Hz when normalized to 10MHz and is the lowest reported to date for MEMS oscillators [1]. The measured RMS jitter for this oscillator is 290psec from 12kHz to 5MHz offset from the carrier. In addition, it is experimentally proven that the oscillator PN settles to a minimum value once the resonator is driven at the bifurcation point in the closed-loop oscillator circuit.
Keywords :
bifurcation; crystal resonators; elemental semiconductors; micromechanical devices; oscillators; phase noise; piezoelectric oscillations; silicon; thin film circuits; MEMS oscillators; RMS jitter; Si; bifurcation; closed-loop oscillator circuit; frequency 1 MHz; frequency 1 kHz; frequency 10 MHz; frequency 12 kHz to 5 MHz; frequency 27 MHz; nonlinear thin-film piezoelectric-on-substrate oscillators; phase noise; thin-film piezoelectric-on-silicon resonator; time 290 ps; Bifurcation; Frequency measurement; Phase noise; Resonant frequency; Temperature measurement; Voltage measurement;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
DOI :
10.1109/MEMSYS.2014.6765884
