DocumentCode :
2680953
Title :
Formation of thin film of co- and ni-silicide by MEVVA implantation
Author :
Zhang, Y. ; Whitlow, H.J. ; Zhang, T.
Author_Institution :
Lund Institute of Technology
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
192
Lastpage :
195
Keywords :
Annealing; Atomic measurements; Electrical resistance measurement; Metallization; Nuclear physics; Semiconductor films; Silicides; Temperature; Thermal stability; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887571
Filename :
887571
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680953
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