Title :
New GaAs PIN Diodes with Lower Dissipation Loss, Faster Switching Speed at Lower Drive Power
Author :
Barratt, C. ; Christou, A. ; Jansen, N. ; Neidert, R.E., Jr. ; Ruess, M.L. ; Young, C.W.
fDate :
May 31 1983-June 3 1983
Abstract :
GaAs PIN diode material with low forward resistance and high Q reverse bias capacitance has been successfully grown for the first time. Static performance data for shunt mounted chips in a microstrip SPST switch show improved insertion loss for the 2-40 GHz range. Dynamic data show switching speed and switch drive power advantages of GaAs over Si for both carrier injection and sweep-out modes of operation.
Keywords :
Capacitance; Circuits; Diodes; Drives; Gallium arsenide; Microstrip; Radio frequency; Silicon; Switches; Tiles;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130963
