Abstract :
A Si bipolar transistor, cavity stablized, oscillator is described that exhibits phase noise that is greater than 83dB below a reference 100KHz tone 300KHz from the carrier in a 3.1KHz bandwidth, less than 2 watts power consumption at 25°C, a typical frequency stability of +-0.00035% over the -20 to 70°C, and utilizing packaged devices.