A 1 GHz GaAs CCD with capacitive gates and high transfer efficiency

Author

Colbeth, R.E. ; Song, J.-I. ; Rossi, D.V. ; Fossum, E.R.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

fYear

1989

fDate

17-19 May 1989

Firstpage

45

Lastpage

49

Abstract

A high-performance GaAs charge-coupled device (CCD) structure that has charge transfer efficiency (CTE) greater than 0.999 at 1 GHz is reported. This device is the highest performance capacitive gate GaAs CCD yet reported. A method of improving CTE in capacitive-gate CCDs by recessing the gap regions is described, and preliminary experimental results are presented. Use of an AlGaAs cap layer, resulting in a four order of magnitude reduction in Schottky gate leakage current, is described

Keywords

III-V semiconductors; charge-coupled device circuits; charge-coupled devices; gallium arsenide; leakage currents; 1 GHz; AlGaAs cap layer; CCD; GaAs; Schottky gate leakage current; capacitive gates; charge-coupled device; gap region recessing; high transfer efficiency; Charge coupled devices; Charge transfer; Clocks; Dark current; Electrodes; Frequency; Gallium arsenide; III-V semiconductor materials; Photonic band gap; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/VTSA.1989.68579

Filename

68579