Multi-Octave Phase Modulators

A new type of reflection circuit for microwave phase modulators is presented. The circuit, which consiate of two semi-conductor diodes and two stubs, provides extremely broad-band of modulators. A binary circuit with p-i-n diodes exhibits an over octave frequency band with phase shift error less than 5% end 3-octave bend with 10% error. For analog modulator the reflection circuit with varactor diodes gives frequency band 0.8-1.2 GHz with the phase shift 90° +- 5° and nonlinearity of 5.5%. Experimental results for binary reflection circuits end modulators are presented.