DocumentCode

2684889

Title

Turn-on speed of grounded gate NMOS ESD protection transistors

Author

Meneghesso, G. ; Luchies, J.R.M. ; Kuper, F.G. ; Mouthhaan, A.J.

Author_Institution

University of Twente

fYear

1996

fDate

1996

Firstpage

1735

Lastpage

1738

Keywords

Electrostatic discharge; Hazards; MOS devices; MOSFETs; Protection; Pulse circuits; SPICE; Semiconductor device modeling; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on

Print_ISBN

0-7803-3369-1

Type

conf

DOI

10.1109/ESREF.1996.888204

Filename

888204