DocumentCode
2685060
Title
Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults - a characterization case study using atomic force microscopy
Author
Jacob, P. ; Hoeppner, K.
Author_Institution
IHP Institute for Semiconductor Physics
fYear
1996
fDate
1996
Firstpage
1783
Lastpage
1786
Keywords
Atomic force microscopy; Capacitors; Delay; Electric breakdown; FETs; Rough surfaces; Scanning electron microscopy; Silicon; Stacking; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888215
Filename
888215
Link To Document