DocumentCode :
2686144
Title :
The Relationship of Magnetotransconductance Mobility Profiles and RF Performance of GaAs FETs
Author :
Chan, S.K. ; Lau, K.M. ; White, P.M.
fYear :
1985
fDate :
4-6 June 1985
Firstpage :
204
Lastpage :
206
Abstract :
The mobility profiles of FET channels were measured on fabricated low noise and power GaAs MESFETs, using the recently developed magnetotransconductance technique. The results are used to study the correlation between the RF performance and the material parameter.
Keywords :
Electrical resistance measurement; FETs; Gallium arsenide; Magnetic field measurement; Microwave devices; Noise measurement; Power measurement; Radio frequency; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1985.1131941
Filename :
1131941
Link To Document :
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