Title :
The Relationship of Magnetotransconductance Mobility Profiles and RF Performance of GaAs FETs
Author :
Chan, S.K. ; Lau, K.M. ; White, P.M.
Abstract :
The mobility profiles of FET channels were measured on fabricated low noise and power GaAs MESFETs, using the recently developed magnetotransconductance technique. The results are used to study the correlation between the RF performance and the material parameter.
Keywords :
Electrical resistance measurement; FETs; Gallium arsenide; Magnetic field measurement; Microwave devices; Noise measurement; Power measurement; Radio frequency; Transconductance; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1131941
