Title :
A Novel GaAs FET Oscillator with Low Phase Noise
Author :
Riddle, A.N. ; Trew, R.J.
Abstract :
A novel GaAs FET oscillator circuit is presented. This circuit is capable of reducing phase noise up to 20 db. A source-coupled pair of GaAs FETs has a balanced characteristic which can eliminate both the reactive and resistive modulation mechanisms which upconvert l/f noise. This circuit is inherently broadband and ideal for monolithic implementations.
Keywords :
Circuit noise; Equations; FETs; Frequency; Gallium arsenide; Low-frequency noise; Microwave devices; Microwave oscillators; Phase noise; Positron emission tomography;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1131956
