A manufacturable, high power RF Gallium Nitride (GaN) technology portfolio with 65V operation and enhanced linearity

Author

Shealy, J.B. ; Vetury, R. ; Trabert, B. ; Runton, D.

Author_Institution

RF Micro Devices, Charlotte, NC, USA

fYear

2011

fDate

7-9 Nov. 2011

Firstpage

1

Lastpage

8

Abstract

We present a portfolio of manufacturable, high power Gallium Nitride (GaN) RF power technologies, demonstrating both an improved 2nd generation linear variant and qualified operation at 65V. To the best of our knowledge, this is the first solid state RF technology qualified for reliable operation at 65V. Furthermore, the 2nd generation linear technology offers 22dB improvement in uncorrected intermodulation distortion at 48V operation and 55W of equivalent output power.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; intermodulation distortion; power amplifiers; power transistors; radiofrequency amplifiers; wide band gap semiconductors; 2nd generation linear variant qualified operation; GaN; HEMT based PA; gain 22 dB; high power RF technology portfolio; power 55 W; uncorrected intermodulation distortion; voltage 48 V; voltage 65 V; Gallium nitride; Portfolios; Production facilities; Radio frequency; Semiconductor device reliability; Temperature measurement; GaN HEMT; high efficiency; high voltage; intermodulation distortion; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on

Conference_Location

Tel Aviv

Print_ISBN

978-1-4577-1692-8

Type

conf

DOI

10.1109/COMCAS.2011.6105956

Filename

6105956