Title :
A high density NAND EEPROM with block-page programming for microcomputer applications
Author :
Momodomi, Masaki ; Iwata, Yoshihisa ; Tanaka, Tomoharu ; Itoh, Yasuo ; Shirota, Riichiro ; Masuoka, Fujio
Abstract :
A 5 V-only 4 Mb NAND EEPROM (electrically erasable programmable read-only memory) has been successfully developed. The EEPROM has on-chip high-voltage generators, so the system needs only a 5 V power supply. The block-page erase/program mode realizes high-speed programming. On-chip test circuits provide high reliability. The NAND EEPROM has many applications for compact microcomputer systems, which need large storage systems with low power consumption
Keywords :
EPROM; NAND circuits; VLSI; integrated memory circuits; 4 Mbit; 5 V; block-page erase/program mode; block-page programming; compact microcomputer systems; high density NAND EEPROM; large storage systems; microcomputer applications; on-chip high-voltage generators; reliability;
Conference_Titel :
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/CICC.1989.56726
