Title :
Possibility of combined use of neuron-MOS and RTD in multi-valued logic circuits
Author :
Yue Cheng ; Jun Xu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
In this paper, the possibility of combined use of neuron-MOS and resonant tunnelling diode is investigated. Two application examples in MVL circuits are described. Three basic forms of combined use are proposed. The advantages and disadvantages are analyzed.
Keywords :
MOS integrated circuits; logic design; multivalued logic circuits; resonant tunnelling diodes; MVL circuits; RTD; multivalued logic circuits; neuron-MOS; resonant tunnelling diode;
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
Print_ISBN :
0-7803-7889-X
DOI :
10.1109/ICASIC.2003.1277469
